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Ge P-type Ga-doped
VGF-Ge Wafer(100) 100 mmdia x 0.5 mm, 1SP, P type ( Ga doped) R:0.128-0.303 Ohm.cm
- Orientation
- (100) +/-0.4 Deg.
- Wafer Size
- 100 mm dia x 500 microns
- Surface Polishing
- One side polished
- Surface roughness
- < 8 A ( by AFM )
- Resistivity
- 0.128 - 0.303 Ohm.cm
- Carrier Concentration
- (1.07 - 2.89) x 1016 /c.c
- Mobility
- 1690 - 2070 cm2/Vs
- Ra(Average Roughness)
- < 0.4 nm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
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Working days : Monday to Saturday
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