|
Ge P-type Ga-doped
VGF-Ge Wafer(100)with 6 degree miscut toward<111> ,100 mmdia x 0.5 mm, 1SP, P type ( Ga doped) R:0.3-0.33 Ohm.cm
- Orientation
- VGF-Ge Wafer(100)with 6 degree miscut toward<111>
- Wafer Size
- 100 mm dia x 500 microns
- Surface Polishing
- One side polished
- Surface roughness
- < 8 A ( by AFM)
- Resistivity
- 0.3 - 0.33 Ohm.cm
- Carrier Concentration
- (0.9 - 1.0) x 1016 /c.c
- Mobility
- 1900 - 2060 cm2/Vs
- Ra(Average Roughness)
- < 0.4 nm
- Package
- under 1000 class clean room
- Structure
- Cubic, a = 5.6754 Å
- Density
- 5.323 g/cm3 at room temperature
|
|
|
Working days : Monday to Saturday
|
|
|