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GaSb Si-doped
GaSb (100), P-type, Si doped, 2" x 0.450 mm wafer, 1sp
- High quality GaSb single crystal wafers for semiconductor industries.
- Size
- 2" diameter x 0.45 mm,
- Resistivities
- 0.002 ~ 0.005 ohm-cm @ 20 deg C
- Carrier Concentration
- (2 ~ 5) E+18 cm-3
- Polish
- one side polished.
- Grown by a special LEC technique , EPD
- < 2000/cm2.
- We also provide high resistivity N and P type GaSb wafers.
- Crystal Structure
- cubic a = 6.095 Å
- Thermal Expansion
- 6.1 x 10 -6 /oK
- Thermal conductivity
- 270 mW / cm.k at 300 K
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| Dopant |
Type |
Carrier
Concentration
(cm-3) |
Mobility
(cm2/V.Sec) |
Resistivity
(ohm-cm) |
EPD
(cm-2) |
| Undoped |
P |
1.0 ~ 2.0 x 1017 |
600 ~ 800 |
~ 0.1 |
< 10000 |
| Zn |
P+ |
2.0 ~ 5.0 x 1018 |
300 ~ 500 |
~ 0.004 |
< 10000 |
| Te |
N |
2.0 ~ 6.0 x 1017 |
2500 ~ 3500 |
~ 0.05 |
< 10000 |
| High Resistivity |
P or N |
1.0 ~ 2.0 x 1016 |
460 |
~ 1.0 |
< 10000 |
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Working days : Monday to Saturday
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