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GaAs(111)
GaAs, Growing Method: VGF ,(111)B , Zn-doped, P-type, 2" dia x 0.4 mm, 2sp
- GaAs single crystal wafer
- • Growing Method: VGF
- • Orientation: (111)B
- • Size: 2" dia x 0.4 mm
- • Polishing: two sides polished
- • Doping: Zn-doped
- • Conductor type: S-C-P
- • Resistivity: (7.49-8.12)E-2 ohm.cm
- • Carrier Concentration: (3.70-4.01)E17cm^-3
- • Mobility: (208-209) cm^2/V.S
- • Ra(Average Roughness) : < 0.4 nm
- • Note: EPI ready wafers
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Working days : Monday to Saturday
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