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GaAs(100) Zn-doped
GaAs Wafer - Growing Method: VGF (100) Zn doped Ptype, , 3"x0.625 mm, 1sp
- GaAs single crystal wafer
- Polishing
- one side polished
- Carrier Concentration
- (1.3 - 2.2) x 1019 /cm3
- Resistivity
- (4.5 - 6.7) x 10-3 ohm.cm
- Ra(Average Roughness)
- < 0.4 nm
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Working days : Monday to Saturday
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