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GaAs(100) Zn-doped
GaAs (100) orientation, P type, Zn-doped, 2" dia x 0.4mm, 6.15xE17cm^-3, 2sp
- GaAs single crystal wafer
- Polishing
- both sides polished
- Resistivity
- (6 ~ 7) x 10-2 Ohm.cm
- Carrier Concentration
- 6.15 E17 cm-3
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Working days : Monday to Saturday
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