| |
P Type Ge (100)
Ge Wafer (100) 2" dia x 0.5 mm, 2SP, P type ( Ga doped), resistivity: 0.001-0.01 ohm-cm
Specification
• Growing Method: CZ • Orientation: (100) +/_0.5 Deg. • Wafer Size: 2" dia x 500 microns • Surface Polishing: Two sides epi polished • Surface roughness: RMS or Ra:~ 10 A(By AFM) • Doping: Ga Doped • Conductor type: P-type • Package: under 1000 class clean room
Typical Properties
- • Structure: Cubic, a = 5.6754 Å
- • Density: 5.323 g/cm3 at room temperature
- • Melting Point: 937.4 oC
- • Thermal Conductivity: 640
|
|
|
Working days : Monday to Saturday
|
|
|
