2" dia. wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition
Substrate
InP Orientation
(100)
un-doped
wafer Size
2" diameter
Thickness
350 +/- 25 um
One side polished
EPI Film
•Lattice matched In/Ga alloy layer of N-type InGaAs:Si(100), •Thickness :1.0 um (+/- 20%) •One Side polished •Roughness of epi-layer is close to 1 mono-layer (ML) •One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.
![Epi: Lattice matched N-type InGaAs:Si[100], on un-doped InP thickness: 1.0um(±20%).2"x0.35mm,1sp](http://cafe24.poxo.com/ec01/mtikr02/MkCj60lH04MGF8dcvBKuW8MJp41WTuSQWh3SEwjm5Sau9NBiveVPO8uec9IlMkfRSKVuToqPG7jifpXONG/y+A==/_/web/product/big/mtikr02_3434.jpg)
